Measurements and simulation of currents flowing through two spin channels of a semimagnetic resonant tunneling diode.
Resonant tunneling diodes and non local spin detection geometry are used for investigations.
Some literature overview:
L.-K. Liefeith, R. Tholapi, M. Hänze, R. Hartmann, T. Slobodskyy, and W. Hansen, "Influence of thermal annealing on the spin injection and spin detection through Fe/GaAs interfaces", App. Phys. Lett. 108, 212404 (2016).
S. Wolski, C. Jasiukiewicz, V.K. Dugaev, J. Barnas, B. Landgraf, T. Slobodskyy, and W. Hansen, Charge and Spin Transport in a Metal-Semiconductor Heterostructure with Double Schottky Barriers, Acta Physica Polonica A 127, 472 (2015).
B. Landgraf, T. Slobodskyy, Ch. Heyn, W. Hansen, Strain relaxation in metamorphic InAlAs buffers. Materials Science and Engineering: B 177, 762 (2012).
T. Slobodskyy, Spin manipulation using semimagnetic heterostructures Vdm Verlag Dr. Müller (2008).
M. Rüth, T. Slobodskyy, C. Gould, G. Schmidt, and L. W. Molenkamp, Fermi edge singularity in II-VI semiconductor resonant tunneling structures. Appl. Phys. Lett. 93, 182104 (2008).
A. Slobodskyy, C. Gould, T. Slobodskyy, G. Schmidt, L. W. Molenkamp, and D. Sánchez. Resonant tunneling diode with spin polarized injector. Appl. Phys. Lett. 90, 122109 (2007).
T. Borzenko, T. Slobodskyy, D. Supp, C. Gould, G. Schmidt, L.W. Molenkamp. Micro-patterned RTDs: Fabrication details and device performance. Microelectronic Engineering 84, 1566 (2007).
D. Supp, T. Slobodskyy, A. Slobodskyy, C. Gould, G. Schmidt, and L.W. Molenkamp. All II-VI magnetic resonant tunneling diodes as voltage controlled spin filters. phys. stat. sol. (c) 4, No. 9, 3390 (2007).
C. Gould, A. Slobodskyy, D. Supp, T. Slobodskyy, P. Grabs, P. Hawrylak, F. Qu, G. Schmidt, and L. W. Molenkamp Remanent Zero Field Spin Splitting of Self-Assembled Quantum Dots in a Paramagnetic Host. Phys. Rev. Lett. 97, 017202 (2006).
S. Maximov, T. Slobodskyy, A. Gröger, F. Lehmann, P. Grabs, L. Hansen, C. R. Becker, C. Gould, G. Schmidt and L. W. Molenkamp. Micro-patterned (Zn,Be)Se/(Zn,Mn)Se resonant tunneling diodes. Semicond. Sci. Technol. 19 946-949 (2004).
C. Gould, A. Slobodskyy, T. Slobodskyy, P. Grabs, C. R. Becker, G. Schmidt, and L. W. Molenkamp. Magnetic resonant tunnelling diodes as voltage-controlled spin selectors. phys. stat. sol. (b) 241, No. 3, 700–703 (2004).
A. Slobodskyy, C. Gould, T. Slobodskyy, C. R. Becker, G. Schmidt, and L. W. Molenkamp.Voltage-Controlled Spin Selection in a Magnetic Resonant Tunneling Diode. Phys. Rev. Lett. 90, 246601 (2003).
Autès, G., Mathon, J. & Umerski, A. Theory of ultrahigh magnetoresistance achieved by k-space filtering without a tunnel barrier. Phys. Rev. B 83, 052403 (2011).
Ashraf, T. et al. Stress and interdiffusion during molecular beam epitaxy of Fe on As-rich GaAs(001). J. Phys.: Condens. Matter 23, 042001 (2011).
Endres, B. et al. Bias dependence of spin injection into GaAs from Fe, FeCo, and (Ga,Mn)As contacts. J. Appl. Phys. 109, 07C505 (2011).
Wada, E. et al. Inversion of Spin Photocurrent due to Resonant Transmission. Phys. Rev. Lett. 105, 156601 (2010).
Salis, G., Fuhrer, A., Schlittler, R.R., Gross, L. & Alvarado, S.F. Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin-injection device. Phys. Rev. B 81, 205323 (2010).