Spin transport. Semiconductor-metal interfaces.

Measurements and simulation of currents flowing
through two spin channels of a semimagnetic
resonant tunneling diode.

Resonant tunneling diodes and non local spin detection geometry are used for investigations.

Some literature overview:

• L.-K. Liefeith, R. Tholapi, M. Hänze, R. Hartmann, T. Slobodskyy, and W. Hansen, "Influence of thermal annealing on the spin injection and spin detection through Fe/GaAs interfaces", App. Phys. Lett. 108, 212404 (2016).
• S. Wolski, C. Jasiukiewicz, V.K. Dugaev, J. Barnas, B. Landgraf, T. Slobodskyy, and W. Hansen, Charge and Spin Transport in a Metal-Semiconductor Heterostructure with Double Schottky Barriers, Acta Physica Polonica A 127, 472 (2015).
• B. Landgraf, T. Slobodskyy, Ch. Heyn, W. Hansen, Strain relaxation in metamorphic InAlAs buffers. Materials Science and Engineering: B 177, 762 (2012).
• T. Slobodskyy, Spin manipulation using semimagnetic heterostructures Vdm Verlag Dr. Müller (2008).
• M. Rüth, T. Slobodskyy, C. Gould, G. Schmidt, and L. W. Molenkamp, Fermi edge singularity in II-VI semiconductor resonant tunneling structures. Appl. Phys. Lett. 93, 182104 (2008).
• A. Slobodskyy, C. Gould, T. Slobodskyy, G. Schmidt, L. W. Molenkamp, and D. Sánchez. Resonant tunneling diode with spin polarized injector. Appl. Phys. Lett. 90, 122109 (2007).
• T. Borzenko, T. Slobodskyy, D. Supp, C. Gould, G. Schmidt, L.W. Molenkamp. Micro-patterned RTDs: Fabrication details and device performance. Microelectronic Engineering 84, 1566 (2007).
• D. Supp, T. Slobodskyy, A. Slobodskyy, C. Gould, G. Schmidt, and L.W. Molenkamp. All II-VI magnetic resonant tunneling diodes as voltage controlled spin filters. phys. stat. sol. (c) 4, No. 9, 3390 (2007).
• C. Gould, A. Slobodskyy, D. Supp, T. Slobodskyy, P. Grabs, P. Hawrylak, F. Qu, G. Schmidt, and L. W. Molenkamp Remanent Zero Field Spin Splitting of Self-Assembled Quantum Dots in a Paramagnetic Host. Phys. Rev. Lett. 97, 017202 (2006).
• S. Maximov, T. Slobodskyy, A. Gröger, F. Lehmann, P. Grabs, L. Hansen, C. R. Becker, C. Gould, G. Schmidt and L. W. Molenkamp. Micro-patterned (Zn,Be)Se/(Zn,Mn)Se resonant tunneling diodes. Semicond. Sci. Technol. 19 946-949 (2004).
• C. Gould, A. Slobodskyy, T. Slobodskyy, P. Grabs, C. R. Becker, G. Schmidt, and L. W. Molenkamp. Magnetic resonant tunnelling diodes as voltage-controlled spin selectors. phys. stat. sol. (b) 241, No. 3, 700–703 (2004).
• A. Slobodskyy, C. Gould, T. Slobodskyy, C. R. Becker, G. Schmidt, and L. W. Molenkamp.Voltage-Controlled Spin Selection in a Magnetic Resonant Tunneling Diode. Phys. Rev. Lett. 90, 246601 (2003).
• Autès, G., Mathon, J. & Umerski, A. Theory of ultrahigh magnetoresistance achieved by k-space filtering without a tunnel barrier. Phys. Rev. B 83, 052403 (2011).
• Ashraf, T. et al. Stress and interdiffusion during molecular beam epitaxy of Fe on As-rich GaAs(001). J. Phys.: Condens. Matter 23, 042001 (2011).
• Endres, B. et al. Bias dependence of spin injection into GaAs from Fe, FeCo, and (Ga,Mn)As contacts. J. Appl. Phys. 109, 07C505 (2011).
• Wada, E. et al. Inversion of Spin Photocurrent due to Resonant Transmission. Phys. Rev. Lett. 105, 156601 (2010).
• Salis, G., Fuhrer, A., Schlittler, R.R., Gross, L. & Alvarado, S.F. Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin-injection device. Phys. Rev. B 81, 205323 (2010).