Growth and properties of self organized and stacked nanostructures

Combined GID image demonstrating influence of
Al cover on strain and morphology of
self organized InAs quantum dots.
(left-no Al, right-1.3ML Al)

Some literature overview:

• D. Grigoriev, S. Lazarev, P. Schroth, A. A. Minkevich, M. Köhl, T. Slobodskyy, M. Helfrich, D. M. Schaadt, T. Aschenbrenner, D. Hommel and T. Baumbach, "Asymmetric skew X-ray diffraction at fixed incidence angle: application to semiconductor nano-objects", Journal of Applied Crystallography 49, 961 (2016).
• J. Kerbst, Ch. Heyn, T. Slobodskyy, and W. Hansen, "Density Limits of High Temperature- and Multiple Local Droplet Etching on AlAs", Journal of Crystal Growth 389, 18 (2014).
• P. Schroth, T. Slobodskyy, D. Grigoriev, A. Minkevich, M. Riotte, S. Lazarev, E. Fohtung, D. Z. Hu, D. M. Schaadt, T. Baumbach. Investigation of buried quantum dots using grazing incidence x-ray diffraction. Materials Science and Engineering: B 177, 721 (2012).
• Zhou, G.Y. et al. The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing. Appl. Phys. Lett. 98, 071914 (2011).
• Abramkin, D.S., Zhuravlev, K.S., Shamirzaev, T.S., Nenashev, A.V. & Kalagin, A.K. Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature. Semiconductors 45, 179-187 (2011).
• Shamirzaev, T.S. et al. Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots. Nanotechnology 21, 155703 (2010).
• Ramsey, J.J., Pan, E., Chung, P.W. & Wang, Z.M. Superlattice Growth via MBE and Green’s Function Techniques. Nanoscale Res Lett 5, 1272-1278 (2010).
• Sugaya, T. et al. Highly stacked and well-aligned In[sub 0.4]Ga[sub 0.6]As quantum dot solar cells with In[sub 0.2]Ga[sub 0.8]As cap layer. Appl. Phys. Lett. 97, 183104 (2010).
• Bailey, C.G., Hubbard, S.M., Forbes, D.V. & Raffaelle, R.P. Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence. Appl. Phys. Lett. 95, 203110-3 (2009).
• Hanke, M. et al. Peculiar three-dimensional ordering in (In,Ga)As/GaAs(311)B quantum dot superlattices. Appl. Phys. Lett. 94, 203105-3 (2009).
• Fu, K. & Fu, Y. Strain-induced Stranski--Krastanov three-dimensional growth mode of GaSb quantum dot on GaAs substrate. Appl. Phys. Lett. 94, 181913-3 (2009).
• Mazur, Y.I. et al. Mechanisms of interdot coupling in (In,Ga)As/GaAs quantum dot arrays. Appl. Phys. Lett. 94, 123112-3 (2009).
• Wang, Z.M. et al. Lateral alignment of InGaAs quantum dots as function of spacer thickness. Appl. Phys. Lett. 94, 083107-3 (2009).
• J, S., Halder, N., Chakrabarti, S. & Mishima, T.D. Effect of InAlGaAs and GaAs combination barrier thickness on the stacking of InAs/GaAs quantum dot heterostructure grown by MBE. IOP Conf. Ser.: Mater. Sci. Eng. 6, 012006 (2009).
• Zolotaryov, A., Schramm, A., Heyn, C. & Hansen, W. X-ray study of temperature dependent growth of InAs/AlAs(0 0 1) quantum dots. J. Phys. D: Appl. Phys. 42, 155401 (2009).
• Shamirzaev, T.S. et al. Atomic and energy structure of InAs/AlAs quantum dots. Phys. Rev. B 78, 085323 (2008).
• Andrews, A. et al. Independent control of InAs quantum dot density and size on AlxGa1–xAs surfaces. Journal of Materials Science: Materials in Electronics 19, 714-719 (2008).